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Typical Characteristics T C = 25°C unless otherwise noted
300
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
60
10
STARTING T J = 25 o C
40
T J = 25 o C
T J = 175 o C
1
STARTING T J =
150 o C
20
0
T J = -55 o C
0.001
0.01 0.1 1
10
3.5
4.0
4.5 5.0 5.5 6.0
6.5
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
80
T C = 25 o C
V GS = 10V
V GS = 7V
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
35
60
V GS = 6V
V GS = 6V
30
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
25
V GS = 10V
20
20
V GS = 5V
0
15
0
0.5
1.0 1.5 2.0 2.5
3.0
0
10
20 30
40
50
2.5
2.0
1.5
1.0
0.5
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V, I D = 44A
I D , DRAIN CURRENT (A)
Figure 8. Drain to Source On Resistance vs Drain
Current
1.2
V GS = V DS , I D = 250 μ A
1.0
0.8
0.6
0.4
-80
-40
0 40 80 120 160
200
-80
-40
0 40 80 120 160
200
T J , JUNCTION TEMPERATURE ( o C)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
?2010 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDD3672 Rev. A 2
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